@Article{Unno_etal2014,
author="Unno, Y. et al
and Garcia, C.
and Jimenez, J.
and Lacasta, C.
and Marti-Garcia, S.
and Soldevila, U.",
title="Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results",
journal="Nuclear Instruments {\&} Methods in Physics Research A",
year="2014",
publisher="Elsevier Science Bv",
volume="765",
pages="80--90",
optkeywords="Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP",
abstract="We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.",
optnote="WOS:000344621000016",
optnote="exported from refbase (https://references.ific.uv.es/refbase/show.php?record=2002), last updated on Thu, 11 Dec 2014 12:50:01 +0000",
issn="0168-9002",
doi="10.1016/j.nima.2014.06.086",
opturl="https://doi.org/10.1016/j.nima.2014.06.086",
language="English"
}